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HMC740ST89E
v00.0209
InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz
Typical Applications Features
P1dB Output Power: +18 dBm Gain: 15 dB Output IP3: +40 dBm Cascadable 50 Ohm I/Os Single Supply: +5V Industry Standard SOT89 Package Robust 1000V ESD, Class 1C Stable Current Over Temperature Active Bias Network
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
The HMC740ST89E is ideal for: * Cellular/3G & WiMAX/4G * Fixed Wireless & WLAN * CATV, Cable Modem & DBS * Microwave Radio & Test Equipment * IF & RF Applications
Functional Diagram
General Description
The HMC740ST89E is an InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the amplifier can be used as a cascadable 50 Ohm RF or IF gain stage as well as a PA or LO driver with up to +18 dBm output power. The HMC740ST89E offers 15 dB of gain with a +40 dBm output IP3 at 100 MHz, and can operate directly from a +5V supply. The HMC740ST89E exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components.
Electrical Specifi cations, Vcc = 5V, TA = +25 C
Parameter Frequency Range Gain Gain Flatness Gain Variation over Temperature Input Return Loss Output Return Loss Reverse Isolation Output Power for 1 dB Compression (P1dB) Output Third Order Intercept (IP3) (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure Supply Current (Icq) 15.5 12 Min. Typ. 0.05 - 1 15 0.1 0.003 18 18 20 18 38 3.5 88 14.5 0.006 11 Max. Min. Typ. 0.05 - 3 15 0.7 0.003 15 18 21 17 32 3.5 88 0.006 Max. Units GHz dB dB dB/ C dB dB dB dBm dBm dB mA
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC740ST89E
v00.0209
InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz
IF Band Performance
Gain & Return Loss
20 15 10 15 RESPONSE (dB) 0 -5 -10 -15 5 -20 -25 -30 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 0 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1 GAIN (dB)
S21 S11 S22
Gain vs. Temperature
20
9
+25C +85C -40C
10
Noise Figure vs. Temperature
8 7 NOISE FIGURE (dB) 6 5 4 3 2
+25C +85C -40C
Output IP3 vs. Temperature
45
40
35
+25C +85C -40C
30
25 1 0 0 0.2 0.4 0.6 0.8 1 FREQUENCY (GHz) 20 0 0.2 0.4 0.6 FREQUENCY (GHz) 0.8 1
Output IP3 vs. Vcc
45
Output IP3 vs. Output Power
50 45
40
40 35
IP3 (dBm)
IP3 (dBm)
35
30 25 20 15
100MHz 400MHz 1GHz
30
4.5V 5.0V 5.5V
25
10 5 0 0.8 1 -5 0 5 Pout (dBm) 10 15
20 0 0.2 0.4 0.6 FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
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DRIVER & GAIN BLOCK AMPLIFIERS - SMT
5
IP3 (dBm)
HMC740ST89E
v00.0209
InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz
Broadband Performance
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Gain & Return Loss
20 15 10
Gain vs. Temperature
20
15 RESPONSE (dB) 5 0 -5 -10 -15 5 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3 GAIN (dB)
S21 S11 S22
10
+25C +85C -40C
Gain vs. Vcc
20
Input Return Loss vs. Temperature
0 -5 RETURN LOSS (dB)
+25C +85C -40C
15 GAIN (dB)
-10 -15 -20 -25
10
4.5V 5.0V 5.5V
5
0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
-30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
Output Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
+25C +85C -40C
Input Return Loss vs. Vcc
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
4.5V 5.0V 5.5V
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC740ST89E
v00.0209
InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz
Output Return Loss vs. Vcc
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
4.5V 5.0V 5.5V
Noise Figure vs. Temperature
8 7 NOISE FIGURE (dB) 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz)
+25C +85C -40C
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9 - 177
Noise Figure vs. Vcc
8 7 NOISE FIGURE (dB) 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz)
4.5V 5.0V 5.5V
Reverse Isolation vs. Temperature
0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
+25C +85C -40C
Reverse Isolation vs. Vcc
0 REVERSE ISOLATION (dB) -5 -10 -15 -20 -25 -30 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
4.5V 5.0V 5.5V
Output IP3 vs. Temperature
50
40
IP3 (dBm)
30
+25C +85C -40C
20
10
0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC740ST89E
v00.0209
InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Output IP3 vs. Vcc
50
Current vs. Temperature
140
+25C +85C -40C
40 CURRENT (mA) 2.5 3
120
IP3 (dBm)
30
4.5V 5.0V 5.5V
100
20
80
10
60
0 0 0.5 1 1.5 2 FREQUENCY (GHz)
40 4.5
4.75
5 VOLTAGE (V)
5.25
5.5
P1dB vs. Temperature
20
Psat vs. Temperature
20
15 P1dB (dBm) Psat (dBm)
15
10
+25C +85C -40C
10
+25C +85C -40C
5
5
0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
0 0 0.5 1 1.5 2 FREQUENCY (GHz) 2.5 3
Power Compression @ 500 MHz
20 Pout (dBm), GAIN (dB), PAE (%) 15 10 5 0 -5 -10 -20
Pout Gain PAE
Power Compression @ 2 GHz
20 Pout (dBm), GAIN (dB), PAE (%) 15 10 5 0 -5 -10 -20
Pout Gain PAE
-17
-14
-11 -8 -5 -2 INPUT POWER (dBm)
1
4
7
-16
-12
-8 -4 0 INPUT POWER (dBm)
4
8
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC740ST89E
v00.0209
InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc) RF Input Power (RFIN) Junction Temperature Continuous Pdiss (T = 85 C) (derate 7.14 mW/C above 85 C) Thermal Resistance (junction to lead) Storage Temperature Operating Temperature ESD Sensitivity (HMB) +5.5 Vdc +10 dBm 150 C 0.46 W 140 C/W -65 to +150 C -40 to +85 C Class 1C
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
9 - 179
Outline Drawing
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number HMC740ST89E Package Body Material RoHS-compliant Low Stress Injection Molded Plastic Lead Finish 100% matte Sn MSL Rating MSL1
[2]
Package Marking [1] H740 XXXX
[1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC740ST89E
v00.0209
InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz
Pin Descriptions
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Pin Number
Function
Description
Interface Schematic
1
IN
This pin is DC coupled. An off chip DC blocking capacitor is required.
3
OUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins and package bottom must be connected to RF/DC ground.
Application Circuit
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC740ST89E
v00.0209
InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 - 3 GHz
Evaluation PCB
9
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
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List of Materials for Evaluation PCB 124390 [1]
Item J1, J2 J3, J4 C1, C2 C3 C4 C5 L1 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 470 pF Capacitor, 0402 Pkg. 100 pF Capacitor, 0402 Pkg. 1000 pF Capacitor, 0603 Pkg. 2.2 F Capacitor Tantalum 820 nH Inductor, 0603 Pkg. HMC740ST89E 119392 Evaluation PCB
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: FR4
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

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